Gallium phosphide (GaP) is a polycrystalline admixture semiconductor that appears
anemic orange and has an aberrant bandage gap of 2.26 eV. Single bright wafers
that are not benumbed accept a bright orange color; about wafers that are
benumbed acerb attending darker as free-carrier assimilation takes place. It
does not deliquesce in baptize and is odorless. The dopants used to access
n-type semiconductors are tellurium or sulfur.
Gallium
phosphide (GaP) is used in semiconductor devices, and in the accomplish of
light-emitting diodes (LEDs) benumbed with added elements or in aggregate with
gallium arsenide phosphide. With adapted dopants, p-type and n-type
semiconductors can be produced. It is used in optical systems.
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